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Supporting data for Novel SiC MOSFETs with Merged Schottky or MOS-Channel Diode for Enhanced Performance Based on Numerical Simulations
The data are about static and dynamic characteristics of proposed novel SiC MOSFETs. The results analysis includes output characteristics, breakdown characteristics, reverse conduction characteristics, gate charge characteristics, reverse transfer capacitance characteristics, inductive switching characteristics, electric field distributions, electron mobility distributions, and so on.