<i>Supporting data for</i> “Effects of Gate Electrode on Carrier Mobility of Thin-Film Transistor with High-k Gate Dielectric”

<p dir="ltr">The primary aim of this research is to experimentally investigate how screening effects influence the channel mobility (μs) in TFTs with high-k gate dielectrics, thereby providing new insights for the development of high-mobility high-k TFTs. The data utilized in this thesis were obtained through various characterization techniques, including film analysis methods such as FTIR, AFM, XPS, and XRD. Additionally, electrical measurements—such as capacitance of capacitors and transfer characteristics of TFTs—were conducted, alongside logical analysis supported by figures. The project directory is organized into five subfolders, each corresponding to Chapters 2 through 6 of the thesis. The experimental procedures for each batch are stored in a folder named 'method'. Related measured and analyzed data using different tools are organized into specific folders, such as CAP, I-V, XPS, XRD, UV-vis, and FIGs. Furthermore, since some of the work has been published, the corresponding papers are included in a folder named 'pub' for easy reference.</p>