Supporting data for "influence of intrinsic defects on 4H-SIC device performances"

The data used in the thesis.

The project is about the analysis of 4H-SiC, a wide band gap semiconductor. In order to figure out the relationship between 4H-SiC defects and device performance, the electrical and optical properties of 4H-SiC junction barrier Schottky (JBS) diode were studied by deep level transient spestroscopy (DLTS), cathodoluminescence (CL) measurement, current-voltage (IV) measurement and capacitance-voltage (CV) measurement.

The dataset includes the measurement results of DLTS, CL measurement, IV measurement and CV measurement.